Extremely strong and sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs, AlGaAs and AlGaAS/GaAs single quantum wells

被引:5
作者
Makimoto, T
Kobayashi, N
机构
[1] NTT Basic Research Laboratories, Atsugi-shi, Kanagawa, 243-01
关键词
AlGaAs/GaAs; atomic-layer doping; delta-doping; GaAs; isoelectronic traps; photoluminescence (PL); secondary ion mass spectrometry (SIMS);
D O I
10.1007/BF02655394
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have performed nitrogen atomic-layer doping into GaAs, AlGaAs, and AlGaAs/GaAs single quantum wells using atomic nitrogen cracked by a hot tungsten filament. While the atomic-layer-doped GaAs layers show a series of sharp and strong photoluminescence lines relating to excitons bound to nitrogen atoms at 8K, atomic-layer-doped AlGaAs layers show several broad nitrogen-related lines. For the atomic-layer-doped single quantum well at the center of the GaAs layer, the quantum well luminescence itself disappears and a dominant and sharp luminescence is observed at a longer wavelength. It is found that the As pressure during the atomic-layer doping greatly affects the luminescence characteristics.
引用
收藏
页码:1527 / 1530
页数:4
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