学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
NEW LUMINESCENCE LINE DUE TO NITROGEN IMPLANTED INTO ALXGA1-XAS(X=0.37)
被引:14
作者
:
GONDA, S
论文数:
0
引用数:
0
h-index:
0
GONDA, S
MAKITA, Y
论文数:
0
引用数:
0
h-index:
0
MAKITA, Y
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1975年
/ 27卷
/ 07期
关键词
:
D O I
:
10.1063/1.88505
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:392 / 394
页数:3
相关论文
共 7 条
[1]
BINDING TO ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS
BALDERESCHI, A
论文数:
0
引用数:
0
h-index:
0
BALDERESCHI, A
HOPFIELD, JJ
论文数:
0
引用数:
0
h-index:
0
HOPFIELD, JJ
[J].
PHYSICAL REVIEW LETTERS,
1972,
28
(03)
: 171
-
+
[2]
Dean P. J., 1973, Journal of Luminescence, V7, P51, DOI 10.1016/0022-2313(73)90059-8
[3]
SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE ON NITROGEN A-LINE AND NN-PAIR LINE TRANSITIONS IN GAAS1-XPX-N
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
DUPUIS, RD
MACKSEY, HM
论文数:
0
引用数:
0
h-index:
0
MACKSEY, HM
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
GROVES, WO
CRAFORD, MG
论文数:
0
引用数:
0
h-index:
0
CRAFORD, MG
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(10)
: 4148
-
&
[4]
FUNDAMENTAL ABSORPTION EDGE OF AIAS AND AIP
LORENZ, MR
论文数:
0
引用数:
0
h-index:
0
LORENZ, MR
CHICOTKA, R
论文数:
0
引用数:
0
h-index:
0
CHICOTKA, R
PETTIT, GD
论文数:
0
引用数:
0
h-index:
0
PETTIT, GD
DEAN, PJ
论文数:
0
引用数:
0
h-index:
0
DEAN, PJ
[J].
SOLID STATE COMMUNICATIONS,
1970,
8
(09)
: 693
-
&
[5]
ANNEALING TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE IN N-IMPLANTED GAAS1-XPX (X = 0.36)
MAKITA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
MAKITA, Y
GONDA, S
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
GONDA, S
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(03)
: 565
-
566
[6]
ONTON A, 1971, B AM PHYS SOC, V16, P371
[7]
PHOTOLUMINESCENCE OF ALXGA1-XAS
SHAH, J
论文数:
0
引用数:
0
h-index:
0
SHAH, J
DIGIOVANNI, AE
论文数:
0
引用数:
0
h-index:
0
DIGIOVANNI, AE
MILLER, BI
论文数:
0
引用数:
0
h-index:
0
MILLER, BI
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(08)
: 3436
-
+
←
1
→
共 7 条
[1]
BINDING TO ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS
BALDERESCHI, A
论文数:
0
引用数:
0
h-index:
0
BALDERESCHI, A
HOPFIELD, JJ
论文数:
0
引用数:
0
h-index:
0
HOPFIELD, JJ
[J].
PHYSICAL REVIEW LETTERS,
1972,
28
(03)
: 171
-
+
[2]
Dean P. J., 1973, Journal of Luminescence, V7, P51, DOI 10.1016/0022-2313(73)90059-8
[3]
SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE ON NITROGEN A-LINE AND NN-PAIR LINE TRANSITIONS IN GAAS1-XPX-N
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
DUPUIS, RD
MACKSEY, HM
论文数:
0
引用数:
0
h-index:
0
MACKSEY, HM
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
GROVES, WO
CRAFORD, MG
论文数:
0
引用数:
0
h-index:
0
CRAFORD, MG
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(10)
: 4148
-
&
[4]
FUNDAMENTAL ABSORPTION EDGE OF AIAS AND AIP
LORENZ, MR
论文数:
0
引用数:
0
h-index:
0
LORENZ, MR
CHICOTKA, R
论文数:
0
引用数:
0
h-index:
0
CHICOTKA, R
PETTIT, GD
论文数:
0
引用数:
0
h-index:
0
PETTIT, GD
DEAN, PJ
论文数:
0
引用数:
0
h-index:
0
DEAN, PJ
[J].
SOLID STATE COMMUNICATIONS,
1970,
8
(09)
: 693
-
&
[5]
ANNEALING TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE IN N-IMPLANTED GAAS1-XPX (X = 0.36)
MAKITA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
MAKITA, Y
GONDA, S
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
GONDA, S
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(03)
: 565
-
566
[6]
ONTON A, 1971, B AM PHYS SOC, V16, P371
[7]
PHOTOLUMINESCENCE OF ALXGA1-XAS
SHAH, J
论文数:
0
引用数:
0
h-index:
0
SHAH, J
DIGIOVANNI, AE
论文数:
0
引用数:
0
h-index:
0
DIGIOVANNI, AE
MILLER, BI
论文数:
0
引用数:
0
h-index:
0
MILLER, BI
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(08)
: 3436
-
+
←
1
→