NEW LUMINESCENCE LINE DUE TO NITROGEN IMPLANTED INTO ALXGA1-XAS(X=0.37)

[1] BINDING TO ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (03) : 171 - +

[2] Dean P. J., 1973, Journal of Luminescence, V7, P51, DOI 10.1016/0022-2313(73)90059-8

[3] SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE ON NITROGEN A-LINE AND NN-PAIR LINE TRANSITIONS IN GAAS1-XPX-N [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4148 - &

[4] FUNDAMENTAL ABSORPTION EDGE OF AIAS AND AIP [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (09) : 693 - &

[5] ANNEALING TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE IN N-IMPLANTED GAAS1-XPX (X = 0.36) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (03) : 565 - 566

[6] ONTON A, 1971, B AM PHYS SOC, V16, P371

[7] PHOTOLUMINESCENCE OF ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3436 - +

[1] BINDING TO ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (03) : 171 - +

[2] Dean P. J., 1973, Journal of Luminescence, V7, P51, DOI 10.1016/0022-2313(73)90059-8

[3] SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE ON NITROGEN A-LINE AND NN-PAIR LINE TRANSITIONS IN GAAS1-XPX-N [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4148 - &

[4] FUNDAMENTAL ABSORPTION EDGE OF AIAS AND AIP [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (09) : 693 - &

[5] ANNEALING TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE IN N-IMPLANTED GAAS1-XPX (X = 0.36) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (03) : 565 - 566

[6] ONTON A, 1971, B AM PHYS SOC, V16, P371

[7] PHOTOLUMINESCENCE OF ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3436 - +