SHARP PHOTOLUMINESCENCE LINES FROM NITROGEN ATOMIC-LAYER-DOPED GAAS

We performed nitrogen atomic-layer doping into GaAs grown by molecular beam epitaxy using nitrogen molecules (N-2) cracked by a hot tungsten filament. While uniformly nitrogen-doped GaAs layers show relatively weak nitrogen-related photoluminescence lines, nitrogen atomic-layer-doped GaAs layers show a series of sharp and strong photoluminescence lines. The dominant photoluminescence line was observed at 1.4437 eV, where an exciton bound to the nitrogen isotropic traps has the highest binding energy. (C) 1995 American Institute of Physics.