Extremely sharp photoluminescence lines from nitrogen atomic-layer-doped AlGaAs/GaAs single quantum wells

被引:10
作者
Makimoto, T
Kobayashi, N
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 2B期
关键词
nitrogen; atomic-layer-doping; AlGaAs/GaAs; quantum well; photoluminescence; isoelectronic traps; excitons; MBE;
D O I
10.1143/JJAP.35.1299
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have applied nitrogen atomic-layer-doping to AlGaAs/GaAs single quantum wells. The atomic-layer-doping was performed at the center of the GaAs quantum well. The resulting structures show sharp photoluminescence lines with a full width at half maximum of 0.3 meV at 8 K. These lines are observed at longer wavelength than those obtained for undoped single quantum wells, indicating that they correspond to the excitons bound to nitrogen atoms in the quantum wells. The full width at half maximum of these nitrogen-related lines depends on the quantum well width. The lines remain sharp above a well width of 10 nm, while they become broad at 5 nm. This suggests that the diameter of the exciton bound to N atoms is about 10 nm. Furthermore, the binding energy of the excitons increases with increasing substrate temperature during the atomic-layer-doping.
引用
收藏
页码:1299 / 1301
页数:3
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