Observation of capacitance hunching at the flat-band-voltage in boron-doped diamond metal/insulator/semiconductor structure

被引：14

作者：

Suzuki, S

Otsuka, Y

Maki, T

Kobayashi, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 8B期

关键词：

diamond film; field effect; MIS; deep level; boron doping; C-V curve; capacitance; CaF2;

D O I：

10.1143/JJAP.35.L1031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal/insulator (CaF2)/semiconducting diamond (MIS) structures employing boron-doped homoepitaxial diamond films were prepared and their electrical properties were investigated. Al/CaF2/diamond MIS diodes exhibited capacitance variation from accumulation to depletion values under the application of bias voltage from -4 to 4V, and at the Aat-band voltage, capacitance hunching always appeared in their capacitance-voltage (C-V) curves. These features coincide well with the prediction based on the theoretical analysis, and originate due to the presence of the deep boron level in the diamond energy gap.

引用

收藏

页码：L1031 / L1034

页数：4

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