Electrical nanoprobing of semiconducting carbon nanotubes using an atomic force microscope

被引：125

作者：

Yaish, Y ^{[1
]}

Park, JY ^{[1
]}

Rosenblatt, S ^{[1
]}

Sazonova, V ^{[1
]}

Brink, M ^{[1
]}

McEuen, PL ^{[1
]}

机构：

[1] Cornell Univ, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.92.046401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We use an atomic force microscope (AFM) tip to locally probe the electronic properties of semiconducting carbon nanotube transistors. A gold-coated AFM tip serves as a voltage or current probe in three-probe measurement setup. Using the tip as a movable current probe, we investigate the scaling of the device properties with channel length. Using the tip as a voltage probe, we study the properties of the contacts. We find that Au makes an excellent contact in the p region, with no Schottky barrier. In the n region, large contact resistances were found which dominate the transport properties.

引用

页数：4

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