Local chemical state change in Co-O resistance random access memory

被引：22

作者：

Shima, Hisashi ^{[1
]}

Takano, Fumiyoshi ^{[1
]}

Muramatsu, Hidenobu ^{[1
]}

Yamazaki, Masashi ^{[1
]}

Akinaga, Hiroyuki ^{[1
]}

Kogure, Akinori ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba, Ibaraki, Japan

[2] Shimadzu Analyt & Measuring Ctr Inc, Kanagawa 2591304, Japan

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2008年 / 2卷 / 03期

关键词：

D O I：

10.1002/pssr.200802003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Kelvin probe force microscopy (KFM) and conductive atomic force microscopy (C-AFM) together with micro X-ray photoelectron spectroscopy (XPS) were performed for the stacking structure comprising of the transition metal oxide Co-O and metal electrode, which exhibits large reproducible resistance switching. The application of the external voltage by the C-A,FM cantilever decreases the resistance of Co-O, which accords with the non-polar forming process observed in the Pt/Co-O/Pt trilayer, known as the candidate of resistance random access memory (ReRAM). Furthermore, the KFM and micro XPS experimentally revealed that the local reductive reaction of Co-O possibly nucleates the defect related energy levels which dominates the current conduction in the low resistance state. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：99 / 101

页数：3

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