Application of amorphous oxide TFT to electrophoretic display

被引：74

作者：

Ito, M. ^{[1
]}

Miyazaki, C. ^{[1
]}

Ishizaki, M. ^{[1
]}

Kon, M. ^{[1
]}

Ikeda, N. ^{[1
]}

Okubo, T. ^{[1
]}

Matsubara, R. ^{[1
]}

Hatta, K. ^{[1
]}

Ugajin, Y. ^{[1
]}

Sekine, N. ^{[1
]}

机构：

[1] Toppan Printing Co Ltd, Tech Res Inst, Saitama 3458508, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 19-25期

关键词：

thin film transistors;

D O I：

10.1016/j.jnoncrysol.2007.10.083

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Application of amorphous oxide thin film transistor (TFT) to electronic paper is demonstrated. We have fabricated a 4-in. bottom gate amorphous In-Ga-Zn-O (a-IGZO) TFT array and combined it with an electrophoretic frontplane. The resolution of the display is 200 ppi and the number of the pixel is 640 x 480 (QVGA). As far as we know, this is the largest pixel count display which has been driven by oxide based TFTs. Moreover, we propose a low-cost fabrication process for oxide based TFT. A printing process was employed to form the source and drain electrodes. The source and electrodes were printed by a standard screen-printing method. A fine pattern for the source and drain electrodes with a channel length of 40 gm was successfully printed onto the a-IGZO semiconductor layer. Our a-IGZO TFT with printed source and drain electrodes shows high on/off ratio of more than seven orders of magnitude and field effect mobility of 2.8 cm(2)/V s. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：2777 / 2782

页数：6

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