Reliability investigations for manufacturable high density PRAM

被引：118

作者：

Kim, K ^{[1
]}

Ahn, SJ ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Div, Adv Technol Dept, Yongin 449900, Kyunggi, South Korea

来源：

2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL | 2005年

关键词：

D O I：

10.1109/RELPHY.2005.1493077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, PRAM(Phase-Change Memory) exploiting new memory material called chalcogetudes has been introduced. The reliability issues for high-density commercial memory products such as disturbance immunity, endurance, and data retention have been addressed and evaluated by using 64 Mb PRAM with 0.12um technology. Moreover, observed degradation modes and underlying physical mechanism were investigated.

引用

页码：157 / 162

页数：6

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