Element resolved spin configuration in ferromagnetic manganese-doped gallium arsenide

被引：65

作者：

Keavney, DJ ^{[1
]}

Wu, D

Freeland, JW

Johnston-Halperin, E

Awschalom, DD

Shi, J

机构：

[1] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

[2] Univ Utah, Dept Phys, Salt Lake City, UT 84112 USA

[3] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.91.187203

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report induced Ga and As moments in ferromagnetic Ga1-xMnxAs detected using x-ray magnetic circular dichroism at the Mn, Ga, and As L-3,L-2 edges. Across a broad composition range, we find As and Ga dichroism signals which indicate an As 4s moment coupled antiparallel to the Mn 3d moment, and a smaller parallel Ga 4s moment. The Ga moment follows that of Mn in both doping and temperature dependence. These results are consistent with recent predictions of induced GaAs host moments and support the model of carrier-mediated ferromagnetic ordering involving As-derived valence band states.

引用

页码：187203 / 187203

页数：4

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