SnO2 separative structure extended gate H+-ion sensitive field effect transistor by the sol-gel technology and the readout circuit developed by source follower

被引：27

作者：

Chou, JC ^{[1
]}

Kwan, PK ^{[1
]}

Chen, ZJ ^{[1
]}

机构：

[1] Natl Yunlin Univ Sci & Technol, Inst Elect Engn, Touliu 640, Yunlin, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 11期

关键词：

tin oxide; sol-gel; EGFET; sensitivity; readout circuit; source follower;

D O I：

10.1143/JJAP.42.6790

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, the tin oxide membrane, fabricated by the sol-gel technology, was used as the pH-sensing layer of the extended gate H+-ion sensitive field effect transistor (EGFET) device. The sensing membrane was deposited on the silicon substrate. The cost of fabricating the EGFET device by the sol-gel technology is lower than by the other methods. The sensitivity of the sol-gel prepared tin oxide separative structure EGFET device is about 57.63 mV/pH in the range of pH1 to pH9. The readout circuit of the tin oxide EGFET was developed by the source follower.

引用

页码：6790 / 6794

页数：5

共 18 条

[1] DEVELOPMENT OF AN ION-SENSITIVE SOLID-STATE DEVICE FOR NEUROPHYSIOLOGICAL MEASUREMENTS [J].