Electrodeposition of ZnO on ITO electrode by potential modulation method

被引：48

作者：

Lee, J ^{[1
]}

Tak, Y

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[2] Inha Univ, Dept Chem Engn, Inchon 402751, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2001年 / 4卷 / 09期

关键词：

D O I：

10.1149/1.1388179

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report the effect of the concentration of hydroxide ion adsorbed (OHad) on indium tin oxide (ITO) in the electrodeposition of zinc oxide (ZnO) by potential modulation method. We found that by applying an optimal constant potential of -0.72 V, X-ray diffraction (XPD) peak intensity of crystalline phase indicating ZnO (100) and ZnO (101) deposited in oxygen containing solution was significantly higher than that of ZnO formed in oxygen free solution. ZnO was islanding on ITO substrate in an oxygen free solution, while uniform ZnO underwent bulk deposition with higher growth rate due to higher concentration of OHad resulted from dissolved oxygen. Thus, morphological images were in good agreement with the crystal structural analysis. In pulsed potential method, several ZnO peaks in ex situ XRD analysis were obtained on ITO substrate as optimal cathodic potential of -0.72 V for 5 s was superimposed on off-time of 5 s at open-circuit potential in each cycle. When relatively shorter cathodic time of 1 s was applied, however, we did not obtain any XRD peak of ZnO, because it might be due to the lack of the critical concentration of OHad to form ZnO on the surface. (C) 2001 The Electrochemical Society.

引用

页码：C63 / C65

页数：3

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