ZnO nanowire Schottky barrier ultraviolet photodetector with high sensitivity and fast recovery speed

被引：210

作者：

Cheng, Gang ^{[1
]}

Wu, Xinghui ^{[1
]}

Liu, Bing ^{[1
]}

Li, Bing ^{[1
]}

Zhang, Xingtang ^{[1
]}

Du, Zuliang ^{[1
]}

机构：

[1] Henan Univ, Key Lab Special Funct Mat, Minist Educ, Kaifeng 475004, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 20期

基金：

中国国家自然科学基金;

关键词：

SENSORS; CONTACTS;

D O I：

10.1063/1.3660580

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO nanowire (NW) ultraviolet (UV) photodetectors have high sensitivity, while the long recovery time is an important limitation for its applications. In this paper, we demonstrate the promising applications of ZnO NW Schottky barrier as high performance UV photodetector with high sensitivity and fast recovery speed. The on/off ratio, sensitivity, and photocurrent gain are 4 x 10(5), 2.6 x 10(3) A/W, and 8.5 x 10(3), respectively. The recovery time is 0.28 s when photocurrent decreases by 3 orders of magnitude, and the corresponding time constant is as short as 46 ms. The physical mechanisms of the fast recovery properties have also been discussed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3660580]

引用

页数：3

共 23 条

[21] Ge/Si nanowire heterostructures as high-performance field-effect transistors [J].

Xiang, Jie ;

Lu, Wei ;

Hu, Yongjie ;

Wu, Yue ;

Yan, Hao ;

Lieber, Charles M. .

NATURE, 2006, 441 (7092) :489-493

[22] Current-voltage characteristics and parameter retrieval of semiconducting nanowires - art. no. 073102 [J].

Zhang, ZY ;

Jin, CH ;

Liang, XL ;

Chen, Q ;

Peng, LM .

APPLIED PHYSICS LETTERS, 2006, 88 (07)

[23] Gigantic enhancement in response and reset time of ZnO UV nanosensor by utilizing Schottky contact and surface functionalization [J].

Zhou, Jun ;

Gu, Yudong ;

Hu, Youfan ;

Mai, Wenjie ;

Yeh, Ping-Hung ;

Bao, Gang ;

Sood, Ashok K. ;

Polla, Dennis L. ;

Wang, Zhong Lin .

APPLIED PHYSICS LETTERS, 2009, 94 (19)

← 1 2 3 →