Quantitative analysis of O2 gas sensing characteristics of picene thin film field-effect transistors

被引：24

作者：

Lee, Xuesong ^{[1
]}

Sugawara, Yasuyuki ^{[2
]}

Ito, Akio ^{[2
]}

Oikawa, Shuhei ^{[2
]}

Kawasaki, Naoko ^{[1
]}

Kaji, Yumiko ^{[1
]}

Mitsuhashi, Ryoji ^{[1
]}

Okamoto, Hideki ^{[3
]}

Fujiwara, Akihiko ^{[4
]}

Omote, Kenji ^{[5
]}

Kambe, Takashi ^{[6
]}

Ikeda, Naoshi ^{[6
]}

Kubozono, Yoshihiro ^{[1
]}

机构：

[1] Okayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan

[2] Kuramoto Seisakusho Co Ltd, Kurihara 9895508, Japan

[3] Okayama Univ, Div Chem & Biochem, Okayama 7008530, Japan

[4] Japan Adv Inst Sci & Technol, Kanazawa, Ishikawa 9230062, Japan

[5] Ideal Star Inc, Sendai, Miyagi 9893204, Japan

[6] Okayama Univ, Dept Phys, Okayama 7008530, Japan

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 08期

基金：

日本科学技术振兴机构;

关键词：

Organic thin film transistor; Picene; O-2; sensor; Mobility reduction factor; Hysteresis;

D O I：

10.1016/j.orgel.2010.06.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

O-2 gas sensing behaviors are studied in picene thin film field-effect transistors (FETs) with hydrophobic polymer (Cytop(TM) or polystyrene) coated SiO2 gate dielectrics. Picene thin film FETs show a rapid reduction of hysteresis in transfer curves recorded in forward and reverse measurement modes, compared to a picene FET with hexamethydisilazane-coated SiO2. The picene FETs show very sensitive O-2 gas sensing effects down to similar to 10 ppm. A quantitative analysis is presented of the gate voltage (V-G) dependent mobility induced by O-2 exposure, i.e., the suppression of drain current at high V-G. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1394 / 1398

页数：5

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