Characterization of spray pyrolysed indium sulfide thin films

被引：130

作者：

John, TT ^{[1
]}

Bini, S

Kashiwaba, Y

Abe, T

Yasuhiro, Y

Kartha, CS

Vijayakumar, KP

机构：

[1] Cochin Univ Sci & Technol, Dept Phys, Cochin 682022, Kerala, India

[2] Iwate Univ, Dept Elect & Elect Engn, Morioka, Iwate 0208551, Japan

[3] Sendai Coll Engn, Sendai, Miyagi 9893128, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 06期

关键词：

D O I：

10.1088/0268-1242/18/6/317

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium sulfide thin films have been prepared using the chemical spray pyrolysis technique. Samples with different substrate temperatures and indium-to-sulfur (In/S) ratios have been prepared and characterized using x-ray diffraction (XRD), x-ray photoelectron spectroscopy, photosensitivity measurements and optical absorption studies. XRD studies have revealed that the samples are beta-In2S3. The optical bandgap has been found to decrease from 2.81 to 2.64 eV with the In/S ratio varying from 2/1 to 2/8. The photoresponse of the samples can be improved by changing either the In/S ratio in the solution or the substrate temperature. From this study we observe that, in terms of crystallinity, bandgap and photoresponse, the sample with the In/S ratio of 1.2/8 is very suitable for any photovoltaic application.

引用

页码：491 / 500

页数：10