Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of an InxGa1-xN/GaN double heterostructure -: art. no. 195302

被引：20

作者：

Choi, CK ^{[1
]}

Little, BD

Kwon, YH

Lam, JB

Song, JJ

Chang, YC

Keller, S

Mishra, UK

DenBaars, SP

机构：

[1] Oklahoma State Univ, Ctr Laser & Photon Res, Stillwater, OK 74078 USA

[2] Oklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA

[3] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[4] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

[5] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[6] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.63.195302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a study of the carrier dynamics in an In0.18Ga0.82N thin film photoexcited well above the band gap using nondegenerate pump-probe spectroscopy and time-resolved photoluminescence (TRPL) for carrier densities ranging from 10(17) to 10(19) cm at 10 K. At carrier densities greater than 4 x 10(18) cm(-3), optical gain occurs across the entire band tail region after similar to2.5 ps time delay, when the hot carriers completely fill these states. From TRPL measurements performed in the surface emission geometry, we observed stimulated emission (SE) with a similar to 28 ps decay time. Since this SE has a threshold density of 1 x 10(18) cm(-3), which is larger than the total density of localized states, and the SE spectra at early time delays are quite different from the spontaneous emission spectra. we attribute the SE to the recombination of an electron-hole plasma from renormalized band-to-band transitions.

引用

页数：7

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