Suggestions for the development of GaN-based photodiodes

被引：14

作者：

Pulfrey, DL ^{[1
]}

Nener, BD ^{[1
]}

机构：

[1] Univ Western Australia, Dept Elect & Elect Engn, Perth, WA 6709, Australia

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 09期

关键词：

D O I：

10.1016/S0038-1101(98)00150-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple, analytical model is used to investigate the steady-state responsivity of GaN-based, p-i-n photodiodes. The trends exhibited by recent experimental data are reproduced and, in so doing, deficiencies in present GaN material, and inadequacies in electrical- and optical-parameter specification, are identified. The model is used to suggest that heterojunction diodes, fabricated from materials in the AlxGa1-xN ternary system, could produce practically important, specialized, UV photodetectors. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1731 / 1736

页数：6

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