Electronic transport in metal nanocrystal arrays: The effect of structural disorder on scaling behavior

被引:218
作者
Parthasarathy, R
Lin, XM
Jaeger, HM
机构
[1] Univ Chicago, James Franck Inst, Chicago, IL 60637 USA
[2] Univ Chicago, Dept Phys, Chicago, IL 60637 USA
关键词
D O I
10.1103/PhysRevLett.87.186807
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate the impact of structural, disorder on electronic transport in gold nanocrystal monolayers. Arrays ranging from void-filled networks to well-ordered superlattices show clear voltage thresholds (VT) due to Coulomb blockade, and temperature-independent conduction indicative of quantum tunneling. Current-voltage, characteristics of arrays with and without long-range structural order were found to collapse onto distinct scaling curves. The former follow a single power law: I similar to (V - V-T)(zeta), zeta = 2.25 +/- 0.1. The latter show additional structure, reflecting the underlying disordered topology.
引用
收藏
页码:186807 / 1
页数:4
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