Advances of pulsed laser deposition of ZnO thin films

被引：18

作者：

Lorenz, M

Hochmuth, H

Schmidt-Grund, R

Kaidashev, EM

Grundmann, M

机构：

[1] Univ Leipzig, Fac Phys & Geosci, D-04103 Leipzig, Germany

[2] Rostov Don State Univ, Mech & Appl Math Res Inst, Rostov Na Donu 344090, Russia

来源：

ANNALEN DER PHYSIK | 2004年 / 13卷 / 1-2期

关键词：

ZnO thin films; pulsed laser deposition; Bragg resonator; depth profiling;

D O I：

10.1002/andp.200310046

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Advances in Pulsed Laser Deposition (PLD) equipment and process design for the epitaxy of ZnO thin films on a-, and c-oriented sapphire substrates are reported. The achieved improvement of device relevant ZnO layer properties is directly related to our equipment design and novel process schemes. First results on growth and reflectivity of ZnO-MgO based dielectric Bragg resonators for future ZnO-based light emitter devices are shown. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：59 / 60

页数：2

共 7 条

[1] Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li [J].