Dielectric functions (1 to 5 eV) of wurtzite MgxZn1-xO (x≤0.29) thin films

被引：162

作者：

Schmidt, R ^{[1
]}

Rheinländer, B ^{[1
]}

Schubert, M ^{[1
]}

Spemann, D ^{[1
]}

Butz, T ^{[1
]}

Lenzner, J ^{[1
]}

Kaidashev, EM ^{[1
]}

Lorenz, M ^{[1
]}

Rahm, A ^{[1
]}

Semmelhack, HC ^{[1
]}

Grundmann, M ^{[1
]}

机构：

[1] Univ Leipzig, Fak Phys & Geowissensch, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 14期

关键词：

D O I：

10.1063/1.1565185

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical dielectric functions for polarization perpendicular and parallel to the c-axis (optical axis) of pulsed-laser-deposition grown wurtzite MgxZn1-xO (0less than or equal toxless than or equal to0.29) thin films have been determined at room temperature using ellipsometry for photon energies from 1 to 5 eV. The dielectric functions reveal strong excitonic contributions for all Mg concentrations x. The band gap energies (E-0(A)=3.369 eV for ZnO to 4.101 eV for x=0.29) show a remarkable blueshift. The exciton binding energy (61 meV for ZnO) decreases to approximately 50 meV for xapproximate to0.17 and increases to approximately 58 meV for x=0.29. In contrast to ZnO, the MgxZn1-xO alloys are found uniaxial negative below the band gap energy, opposite to previously reported results. (C) 2003 American Institute of Physics.

引用

页码：2260 / 2262

页数：3

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