EFFECT OF DISORDER ON EXCITON BINDING IN SEMICONDUCTOR ALLOYS

被引：27

作者：

KANEHISA, MA ^{[1
]}

ELLIOTT, RJ ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT THEORET PHYS,OXFORD OX1 3NP,ENGLAND

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.35.2228

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2228 / 2236

页数：9

共 27 条

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