Interface bonding for Fe thin films on GaAs surfaces of differing morphology

被引：42

作者：

Freeland, JW ^{[1
]}

Coulthard, I

Antel, WJ

Stampfl, APJ

机构：

[1] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

[2] Australian Nucl Sci & Technol Org, Div Phys, Lucas Hts, NSW, Australia

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.63.193301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Formation of a common type of Fe-As local bonding in Fe thin films on GaAs surfaces of differing orientation and preparation is evidenced through a common charge transfer at the interface. X-ray absorption studies of unoccupied 3d states for Fe thin films on sputtered GaAs(100) and cleaved GaAs(110) display a similar amount of 3d charge transfer into the GaAs substrate even though the mode of surface preparation leads to reduced intermixing in the (100) case. Implications of these results for the understanding of the role of the Fe-GaAs interface in both electronic and magnetic properties are discussed.

引用

页数：4

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