InAs/InP(001) quantum wire formation due to anisotropic stress relaxation:: in situ stress measurements

We report in situ and in real time quantitative measurements of stress along [1 1 0] and [1 1 0] directions during the formation of InAs/InP(0 0 1) quantum wires (QWr) and consequent stress relaxation. Results show a strong stress anisotropy due to the distortion of As-In bonds along [1 1 0] and As-As dimerization along [1 1 0]. This anisotropy is claimed to be the origin of QWr formation instead of self-assembled quantum dots. Anisotropic stress relaxation associated to QWr formation is shown to be characteristic of heteroepitaxial systems involving different group V elements grown by MBE under group V stabilized surface (2 x 4 reconstruction). (C) 2001 Elsevier Science B.V. All rights reserved.