Turnstile operation using a silicon dual-gate single-electron transistor

被引：20

作者：

Ono, Y

Zimmerman, NM

Yamazaki, K

Takahashi, Y

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] NIST, Gaithersburg, MD 20899 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 10A期

关键词：

single-electron turnstile; single-electron transistor; silicon-on-insulator; nanotechnology; current standard;

D O I：

10.1143/JJAP.42.L1109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate independently controls the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with a frequency f of similar to1 MHz and a phase shift of pi, current staircases quantized in units of ef are observed in drain current vs drain voltage characteristics at 25 K.

引用

收藏

页码：L1109 / L1111

页数：3

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