The electrical properties of Metal-Ferroelectric (PbZr0.53Ti0.47O3)-Insulator-Silicon (MFIS) capacitors with different insulator materials

MFIS capacitors with Pb(Zr-0.53,Ti-0.47)O-3 (PZT) ferroelectric layer and HfO2, La2O3 and Dy2O3 insulator layers were fabricated and characterized. The size of the capacitance-voltage (C-V) memory windows was investigated. The maximum memory windows of MFIS capacitors with La2O3 and Dy2O3 insulators are close to the theoretical value Delta W approximate to 2d(f)E(c) approximate to 1.8 V. The temperature dependence of the current conduction mechanisms through the MFIS capacitors was also investigated. In the temperature range of 375-450K, the electrical conduction of MFIS capacitors with WO, and Dy2O3 insulators is space-charge-limited current (SCLC), whereas for Al/PZT/La2O3/Si capacitor Poole-Frenkel emission was the dominant mechanism at higher fields (>= 0.8 MV/cm) in the temperature range from 325K to 400K.