Electrical properties of SrBi2Ta2O9/insulator/Si structures with various insulators

被引：33

作者：

Lee, WJ ^{[1
]}

Shin, CH ^{[1
]}

Cho, CR ^{[1
]}

Lyu, JS ^{[1
]}

Kim, BW ^{[1
]}

Yu, BG ^{[1
]}

Cho, KI ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Next Generat Semicond Technol Dept, Daejon 305350, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4A期

关键词：

electrical properties; SrBi2Ta2O9; films; insulator; MFIS structure; hysteresis window;

D O I：

10.1143/JJAP.38.2039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of metal/ferroelectric/insulator/semiconductor (MFIS) structures with various insulators were investigated. Layers of Si3N4/SiO2 (NO) formed by thermal oxidation and low pressure chemical vapor deposition (LPCVD) and Al2O3 layers deposited by atomic layer deposition (ALD) were used as inter-dielectric layers. SrBi2Ta2O9 (SBT) films used as ferroelectric layers were prepared by metal organic decomposition (MOD). The capacitance-voltage (C-V) curves including the memory window were affected by varying the annealing temperature for SET films. Memory windows for MFIS structures with NO inter-dielectrics in the range of 0.75-1.2 V were maintained up to annealing temperatures of 900 degrees C. The width of the memory window in C-V curves for MFISs using thin Al2O3 layers decreases with increasing annealing temperature. Therefore, the selection of a good insulator and parameter control are required for the use of MFIS-ferroelectric random access memories (FRAMs).

引用

页码：2039 / 2043

页数：5

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