Rare-earth scandate single- and multi-layer thin films as alternative gate oxides for microelectronic applications

Thin films of rare-earth scandates (REScO3) as well as multi-layers of scandates and titanates have been prepared using pulsed laser deposition. Epitaxial films were grown on SrRuO3/SrTiO3(100) as well as amorphous films on silicon substrates. The epitaxial films are investigated to measure the physical properties of the crystalline material. Electrical measurements (CV, leakage current) show for example high epsilon(r) > 20 for the scandates and epsilon(r) > 35 for the epitaxial and amorphous multi-layer films. A diffusion of the new materials into silicon is not observed.