Band alignment between (100)Si and complex rare earth/transition metal oxides

被引：131

作者：

Afanas'ev, VV

Stesmans, A

Zhao, C

Caymax, M

Heeg, T

Schubert, J

Jia, Y

Schlom, DG

Lucovsky, G

机构：

[1] Univ Leuven, Dept Phys, B-3001 Louvain, Belgium

[2] IMEC, B-3001 Louvain, Belgium

[3] Forschungszentrum Julich, Inst Schichten & Grenzflachen, D-52425 Julich, Germany

[4] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[5] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 24期

关键词：

D O I：

10.1063/1.1829781

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron energy band alignment between (100)Si and several complex transition/rare earth (RE) metal oxides (LaScO3, GdScO3, DyScO3, and LaAlO3, all in amorphous form) is determined using a combination of internal photoemission and photoconductivity measurements. The band gap width is nearly the same in all the oxides (5.6-5.7 eV) yielding the conduction and valence band offsets at the Si/oxide interface of 2.0+/-0.1 and 2.5+/-0.1 eV, respectively. However, band-tail states are observed and these are associated with Jahn-Teller relaxation of transition metal and RE cations which splits their d* states. (C) 2004 American Institute of Physics.

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页码：5917 / 5919

页数：3

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