Deposition of ultrathin nafion layers on sol-gel-derived phenylsilsesquioxane particles via layer-by-layer assembly

被引:13
作者
Daiko, Yusuke [1 ]
Sakamoto, Hisatoshi [1 ]
Katagiri, Kiyofumi [2 ]
Muto, Hiroyuki [1 ]
Sakai, Mototsugu [1 ]
Matsuda, Atsunori [1 ]
机构
[1] Toyohashi Univ Technol, Dept Mat Sci, Toyohashi, Aichi 4418580, Japan
[2] Nagoya Univ, Grad Sch Engn, Dept Appl Chem, Nagoya, Aichi 4648603, Japan
关键词
D O I
10.1149/1.2885101
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Ultrathin layers of oppositely charged poly(diallyldimethylammonium chloride) (PDDA) and Nafion were alternately deposited on negatively charged phenylsilsesquioxane (PhSiO3/2) microparticles via layer-by-layer assembly. An extremely small amount of Nafion was used for the layers. The average thickness of a Nafion layer was estimated to be 2.6 nm from the amount of deposited Nafion and the density. A monolithic sheet was obtained from PhSiO3/2 particles with PDDA and the Nafion multilayer when the particles were pressed at 70 MPa. Fenton's test, differential thermal analysis, and thermogravimetry revealed that PhSiO3/2 particles are chemically and thermally stable. The monolithic samples prepared using PDDA/Nafion-multilayer-coated PhSiO3/2 particles showed proton conductivities similar to 4 orders of magnitude higher than those of samples without multilayers, and their conductivity reached about 10(-5) S/cm at 80 degrees C and 80% relative humidity. (c) 2008 The Electrochemical Society.
引用
收藏
页码:B479 / B482
页数:4
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