Growth analysis of chemical bath deposited In(OH)xSy films as buffer layers for CuInS2 thin film solar cells

被引：17

作者：

Kaufmann, C ^{[1
]}

Dobson, PJ ^{[1
]}

Neve, S ^{[1
]}

Bohne, W ^{[1
]}

Klaer, J ^{[1
]}

Klenk, R ^{[1
]}

Pettenkofer, C ^{[1
]}

Röhrich, J ^{[1
]}

Scheer, R ^{[1
]}

Störkel, U ^{[1
]}

机构：

[1] Univ Oxford, Dept Engn Sci, Oxford OX1 3PJ, England

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915959

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Although the deposition of In(OH)(x)S-y by chemical bath deposition has been successfully demonstrated before, the deposition mechanism remains unclear. Using x-ray photoelectron spectroscopy we have identified two growth phases: an initial nucleation of mainly In(OH)(x)O-y followed by rapid, mainly colloidal growth of In(OH)xSy. The deposited films are additionally characterized using elastic recoil detection analysis, transmission and scanning electron microscopy. An indirect energy band gap was observed at similar to2.2eV by optical transmission spectroscopy. The method has been used to make a Cd-free buffer layer for CuInS2 thin film solar cells and an efficiency of 9.1% has been achieved.

引用

页码：688 / 691

页数：4

共 16 条

[1] Structure and morphology of the indium hydroxy sulphide thin films [J].