Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

被引：43

作者：

Lee, Jong Ho ^{[1
,2
]}

Kim, Gun Hwan ^{[1
,2
]}

Ahn, Young Bae ^{[1
,2
]}

Park, Ji Woon ^{[1
,2
]}

Ryu, Seung Wook ^{[3
]}

Hwang, Cheol Seong ^{[1
,2
]}

Kim, Hyeong Joon ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 12期

关键词：

This work was supported by R&D Program (#:10039191); and National Research Program for Nano Semiconductor Apparatus Development sponsored by the Korean Ministry of Knowledge and Economy;

D O I：

10.1063/1.3696077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major factor determining the emergence of TS. On-state conduction was found to occur at localized regions. The change of threshold voltage and off-state current by varying composition was observed, which were explained by the change in the concentration of defects and generation efficiency of carriers. The serially connected TiO2 unipolar switching memory and Si-As-Te threshold switch showed the resistance switching of the memory layer with the leakage current lowered by similar to 120 times at 0.5 V. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3696077]

引用

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