Carbon-related centres in irradiated SiGe alloys

被引：8

作者：

Hayama, S ^{[1
]}

Davies, G

Tan, J

Markevich, VP

Peaker, AR

Evans-Freeman, J

Vernon-Parry, KD

Abrosimov, NV

机构：

[1] Kings Coll London, Dept Phys, London WC2R 2LS, England

[2] Univ Manchester, Ctr Elect Mat, Manchester M60 1QD, Lancs, England

[3] Inst Kristallzuchtung, D-12489 Berlin, Germany

来源：

PHYSICA B-CONDENSED MATTER | 2003年 / 340卷

关键词：

SiGe alloys; photoluminescence; DLTS; defects;

D O I：

10.1016/j.physb.2003.09.222

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report measurements on the C-i-O-i 'C-centre' in Czochralski-grown Si1-xGex (xless than or equal to0.06), using the complementary techniques of photoluminescence (PL) and deep-level transient spectroscopy (DLTS). Both techniques show that the donor level of the C-centre in SiGe alloys shifts towards the valence band with increasing x. Unexpectedly, the shift rate of d(DeltaH(n))/dx = +550 meV detected using DLTS is found to be 1.6 times greater than that from PL measurements. Alloy broadening of the PL line and the DLTS signal are similar, and suggest that the C-centre is preferentially found in a Ge-rich environment. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：823 / 826

页数：4

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