Non-alloy Cr/Au ohmic contacts in the technology of planar beam-lead GaAs p-i-n diodes

被引：3

作者：

Aleksandrov, SE ^{[1
]}

Volkov, VV

Ivanova, VP

Kuz'michev, YS

Solov'ev, YV

机构：

[1] St Petersburg State Tech Univ, St Petersburg, Russia

[2] Svetlana Elektronpribor Corp, St Petersburg, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2005年 / 31卷 / 07期

关键词：

Radar; GaAs; Contact Resistance; Ohmic Contact; Protection System;

D O I：

10.1134/1.2001060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristics of non-alloy Cr/Au ohmic contacts in planar beam-lead GaAs p-i-n diodes have been studied. The room-temperature reduced contact resistance in the structures studied was 2 x 10(-6) cm(2) . The obtained parameters of p-i-n diodes allow these devices to be used as limiters in radar protection systems. (C) 2005 Pleiades Publishing, Inc.

引用

页码：581 / 583

页数：3

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