Heavily carbon-doped GaAs grown on various oriented GaAs substrates by MOMBE

被引：3

作者：

Hatatani, S ^{[1
]}

Guo, LQ ^{[1
]}

Oh, JH ^{[1
]}

Grahn, HT ^{[1
]}

Konagai, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL, RES CTR QUANTUM EFFECTS ELECT, MEGURO KU, TOKYO 152, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(96)00584-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Heavily carbon-doped GaAs epitaxial layers have been grown simultaneously on (100), (111)A, (111)B, (411)A, (411)B and (711)A semi-insulating (SI) GaAs substrates by metalorganic molecular beam epitaxy (MOMBE) using trimethylgallium (TMG) and elemental As (As-4). The hole concentration and surface flatness strongly depend on the substrate orientation. The highest carbon incorporation was observed for the layers grown on a (411)A substrate with a hole concentration of 1.0 x 10(21) cm(-3) and a lattice mismatch of Delta d/d = -0.48%. Atomic force microscope (AFM) images reveal that the epilayers grown on (411)A substrates exhibit extremely flat surfaces, although these layers contain the highest carbon concentration.

引用

页码：297 / 300

页数：4

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