EXTREMELY FLAT INTERFACES IN GAAS ALGAAS QUANTUM-WELLS GROWN ON GAAS (411) A SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：99

作者：

SHIMOMURA, S

WAKEJIMA, A

ADACHI, A

OKAMOTO, Y

SANO, N

MURASE, K

HIYAMIZU, S

机构：

[1] NISSHIN ELECT CO LTD, DIV RES & DEV, UKYO KU, KYOTO 615, JAPAN

[2] KUBOTA CORP, AMAGASAKI, HYOGO 661, JAPAN

[3] KWANSEI GAKUIN UNIV, FAC SCI, NISHINOMIYA, HYOGO 662, JAPAN

[4] OSAKA UNIV, FAC SCI, TOYONAKA, OSAKA 560, JAPAN

[5] OSAKA UNIV, EXTREME MAT RES CTR, TOYONAKA, OSAKA 560, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 12A期

关键词：

MBE; GAAS; ALGAAS; QUANTUM WELLS; GAAS (411)A SUBSTRATES; PHOTOLUMINESCENCE; HETEROINTERFACE;

D O I：

10.1143/JJAP.32.L1728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs/Al0.3Ga0.7As quantum wells (QWs) grown on (411)A-oriented GaAs substrates by molecular beam epitaxy (MBE) showed extremely flat interfaces over a macroscopic area (about 200 mum phi) even for the case of no growth interruption, which is mainly due to the intrinsically large migration of Ga atoms and layer growth in the step-flow mode on the (411)A plane. Photoluminescence linewidths at 4.2 K were almost the same as or better than the narrowest linewidths reported for GaAs/AlGaAs and GaAs/AlAs QWs grown on GaAs (100) substrates with growth interruption at each GaAs/AlGaAs(AlAs) interface. Only one sharp luminescence peak was observed for each QW on the (411)A substrates, in contrast with three luminescence peaks for the QWs on the (100) substrates, indicating that extremely flat and uniform interfaces over a macroscopic area of laser excitation (200 mum diameter) are realized in the GaAs/AlGaAs QWs grown on (411)A GaAs substrates.

引用

页码：L1728 / L1731

页数：4

共 10 条

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