MODEL FOR MOLECULAR-BEAM-EPITAXY GROWTH OVER NONPLANAR SURFACES

被引：39

作者：

OHTSUKA, M

MIYAZAWA, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 07期

关键词：

D O I：

10.1063/1.341490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3522 / 3527

页数：6

共 14 条

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[5] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY
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[6] KOMABAYASI M, 1972, J RECH ATMOS, V6, P307
[7] ALIGNMENT SIGNAL FROM A MARK DEFORMED BY MOLECULAR-BEAM EPITAXIAL OVERGROWTH FOR FOCUSED ION-BEAM IMPLANTATION
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04): : L234 - L236
[8] SELF-MASKING SELECTIVE EPITAXY BY MOLECULAR-BEAM METHOD
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[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 940 - 942
[9] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS
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DOBSON, PJ
JOYCE, BA
ZHANG, J
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 100 - 102
[10] ONE ATOMIC LAYER HETEROINTERFACE FLUCTUATIONS IN GAAS-ALAS QUANTUM WELL STRUCTURES AND THEIR SUPPRESSION BY INSERTION OF SMOOTHING PERIOD IN MOLECULAR-BEAM EPITAXY
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TANAKA, M
YOSHINO, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L417 - L420

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