FUNDAMENTALS OF MBE

[1] VELOCITY DISTRIBUTIONS OF AS2 AND AS4 SCATTERED FROM GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 200 - 203

[2] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 545 - &

[3] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &

[4] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461

[5] NATIVE DEFECTS AND STOICHIOMETRY IN GAALAS [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 36 (01) : 125 - 137

[6] CABRERA N, 1949, DIS FARADAY SOC, V5, P40

[7] CALAWA AR, UNPUBLISHED

[8] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761

[9] CHANG LL, 1975, EPITAXIAL GROWTH A

[10] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[1] VELOCITY DISTRIBUTIONS OF AS2 AND AS4 SCATTERED FROM GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 200 - 203

[2] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 545 - &

[3] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &

[4] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461

[5] NATIVE DEFECTS AND STOICHIOMETRY IN GAALAS [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 36 (01) : 125 - 137

[6] CABRERA N, 1949, DIS FARADAY SOC, V5, P40

[7] CALAWA AR, UNPUBLISHED

[8] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761

[9] CHANG LL, 1975, EPITAXIAL GROWTH A

[10] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9