Pressure-induced amorphization of quasibinary GeTe-Sb2Te3:: The role of vacancies

被引：34

作者：

Kolobov, A. V.

Haines, J.

Pradel, A.

Ribes, M.

Fons, P.

Tominaga, J.

Steimer, C.

Aquilanti, G.

Pascarelli, S.

机构：

[1] Univ Montpellier 2, CNRS, UMR 5253, Inst Charles Gerhardt, F-34095 Montpellier 5, France

[2] Natl Inst Adv Ind Sci & Technol, CAN FOR, Tsukuba, Ibaraki 3058562, Japan

[3] Rhein Westfal TH Aachen, Inst Phys 1, Lehrstuhl Phys Mat, D-52056 Aachen, Germany

[4] ESRF, F-38343 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 02期

关键词：

THIN-FILMS; MECHANISM;

D O I：

10.1063/1.2752016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors demonstrate that the cubic phase of quasibinary GeTe-Sb2Te3 alloys (GST), the material of choice in phase-change optical recording (such as digital versatile disk-random access memory) can be rendered amorphous by the application of hydrostatic pressure. The amorphization pressure depends on the GST composition. The pressure-induced amorphous phase possesses a local structure around Ge atoms similar to that of laser-amorphized GST. They argue that vacancies are crucial for the pressure-induced amorphization. (C) 2007 American Institute of Physics.

引用

页数：3

共 13 条

[1] High-pressure induced structural changes in metastable Ge2Sb2Te5 thin films:: An X-ray absorption study [J].