Ionized and neutral donor-bound excitons in ZnO

被引:109
作者
Meyer, B. K.
Sann, J.
Lautenschlager, S.
Wagner, M. R.
Hoffmann, A.
机构
[1] Univ Giessen, Inst Phys, D-35592 Giessen, Germany
[2] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany
关键词
D O I
10.1103/PhysRevB.76.184120
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show for ZnO a correlation between the ionized donor bound exciton D+X recombinations I-0, I-1, and I-2 and the neutral donor bound exciton (DX)-X-0 recombinations I-6a, I-8, and I-9, respectively. The experimental data on the localization energies of ionized and neutral donor bound excitons are compared to theoretical predictions and a good agreement is found. We give an estimate of the localization energies of neutral acceptor bound excitons. One can conclude that the localization energies of neutral donor and acceptor bound excitons in ZnO will be very close in energy and an assignment of transition lines to donors and/or acceptors (in the absence of decisive data from magneto-optics) will not be straightforward.
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页数:4
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共 34 条
[1]   Optical investigations on excitons bound to impurities and dislocations in ZnO [J].
Alves, H ;
Pfisterer, D ;
Zeuner, A ;
Riemann, T ;
Christen, J ;
Hofmann, DM ;
Meyer, BK .
OPTICAL MATERIALS, 2003, 23 (1-2) :33-37
[2]   THEORY OF EXCITONS BOUND TO NEUTRAL IMPURITIES IN POLAR SEMICONDUCTORS [J].
ATZMULLER, H ;
FROSCHL, F ;
SCHRODER, U .
PHYSICAL REVIEW B, 1979, 19 (06) :3118-3129
[3]   Complex excitonic recombination kinetics in ZnO: Capture, relaxation, and recombination from steady state [J].
Bertram, F. ;
Christen, J. ;
Dadgar, A. ;
Krost, A. .
APPLIED PHYSICS LETTERS, 2007, 90 (04)
[4]   Excitonic transitions in ZnO/MgZnO quantum well heterostructures [J].
Coli, G ;
Bajaj, KK .
APPLIED PHYSICS LETTERS, 2001, 78 (19) :2861-2863
[5]   EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J].
HAYNES, JR .
PHYSICAL REVIEW LETTERS, 1960, 4 (07) :361-363
[6]   ELECTRON CORRELATION AND BOUND EXCITONS IN SEMICONDUCTORS [J].
HERBERT, DC .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (17) :3327-3344
[7]  
Hopfield J. J., 1964, P INT C PHYS SEMICON, P725
[8]   Investigation on the p-type formation mechanism of arsenic doped p-type ZnO thin film [J].
Kang, Hong Seong ;
Kim, Gun Hee ;
Kim, Dong Lim ;
Chang, Hyun Woo ;
Du Ahn, Byung ;
Lee, Sang Yeol .
APPLIED PHYSICS LETTERS, 2006, 89 (18)
[9]   Structural, electrical, and optical properties of p-type ZnO thin films with Ag dopant [J].
Kang, Hong Seong ;
Du Ahn, Byung ;
Kim, Jong Hoon ;
Kim, Gun Hee ;
Lim, Sung Hoon ;
Chang, Hyun Woo ;
Lee, Sang Yeol .
APPLIED PHYSICS LETTERS, 2006, 88 (20)
[10]   Valence-band ordering and magneto-optic exciton fine structure in ZnO [J].
Lambrecht, WRL ;
Rodina, AV ;
Limpijumnong, S ;
Segall, B ;
Meyer, BK .
PHYSICAL REVIEW B, 2002, 65 (07) :752071-7520712