Structural, electrical, and optical properties of p-type ZnO thin films with Ag dopant

被引：222

作者：

Kang, Hong Seong ^{[1
]}

Du Ahn, Byung ^{[1
]}

Kim, Jong Hoon ^{[1
]}

Kim, Gun Hee ^{[1
]}

Lim, Sung Hoon ^{[1
]}

Chang, Hyun Woo ^{[1
]}

Lee, Sang Yeol ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seodaemoon Ku, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 20期

关键词：

D O I：

10.1063/1.2203952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

p-type ZnO films have been fabricated on a (0001) Al2O3 substrate, using Ag2O as a silver dopant by pulsed laser deposition. The structural property of those films is systematically characterized by observing the shift of (0002) peak to investigate the substitution of Ag+ for Zn+. Narrow deposition temperature for Ag-doped p-type ZnO films has been obtained in the range of 200-250 degrees C with the hole concentration of 4.9x10(16)-6.0x10(17) cm(-3). A neutral acceptor bound exciton has been clearly observed by photoluminescence emitted at 3.317 eV in Ag-doped p-type ZnO thin films. (c) 2006 American Institute of Physics.

引用

页数：3

共 30 条

[1] ZnO diode fabricated by excimer-laser doping [J].

Aoki, T ;

Hatanaka, Y ;

Look, DC .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3257-3258

[2]

Fan J., 1995, J APPL PHYS, V77, P9

[3] Fabrication of the low-resistive p-type ZnO by codoping method [J].

Joseph, M ;

Tabata, H ;

Saeki, H ;

Ueda, K ;

Kawai, T .

PHYSICA B-CONDENSED MATTER, 2001, 302 :140-148

[4] ADMITTANCE SPECTROSCOPY OF ZNO CRYSTALS CONTAINING AG [J].

KANAI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9A) :2021-2022

[5] Annealing effect on the property of ultraviolet and green emissions of ZnO thin films [J].

Kang, HS ;

Kang, JS ;

Kim, JW ;

Lee, SY .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (03) :1246-1250

[6] Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant [J].

Kim, KK ;

Kim, HS ;

Hwang, DK ;

Lim, JH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2003, 83 (01) :63-65

[7]

Klingshirn c., 1995, SEMICONDUCTOR OPTICS

[8] DEEP ENERGY-LEVELS OF DEFECTS IN THE WURTZITE SEMICONDUCTORS ALN, CDS, CDSE, ZNS, AND ZNO [J].

KOBAYASHI, A ;

SANKEY, OF ;

DOW, JD .

PHYSICAL REVIEW B, 1983, 28 (02) :946-956

[9] Fabrication of ZnO thin film diode using laser annealing [J].

Lee, SY ;

Shim, ES ;

Kang, HS ;

Pang, SS ;

Kang, JS .

THIN SOLID FILMS, 2005, 473 (01) :31-34

[10] Effects of chemical composition on the optical properties of Znl1-xCdxO thin films [J].

Lee, SY ;

Li, Y ;

Lee, JS ;

Lee, JK ;

Nastasi, M ;

Crooker, SA ;

Jia, QX ;

Kang, HS ;

Kang, JS .

APPLIED PHYSICS LETTERS, 2004, 85 (02) :218-220

← 1 2 3 →