Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance

被引：254

作者：

Brunco, D. P. ^{[1
]}

De Jaeger, B. ^{[2
]}

Eneman, G. ^{[2
,4
]}

Mitard, J. ^{[2
]}

Hellings, G. ^{[2
,4
]}

Satta, A. ^{[2
]}

Terzieva, V. ^{[2
]}

Souriau, L. ^{[2
]}

Leys, F. E. ^{[2
]}

Pourtois, G. ^{[2
]}

Houssa, M. ^{[2
]}

Winderickx, G. ^{[2
]}

Vrancken, E. ^{[2
]}

Sioncke, S. ^{[2
]}

Opsomer, K. ^{[2
]}

Nicholas, G. ^{[2
]}

Caymax, M. ^{[2
]}

Stesmans, A. ^{[3
]}

Van Steenbergen, J. ^{[2
]}

Mertens, P. W. ^{[2
]}

Meuris, M. ^{[2
]}

Heyns, M. M. ^{[2
,5
]}

机构：

[1] IMEC, Louvain, Belgium

[2] IMEC, B-3001 Louvain, Belgium

[3] Univ leuven, Dept Phys, B-3001 Louvain, Belgium

[4] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

[5] Katholieke Univ Leuven, Dept Met & Mat Engn, B-3001 Louvain, Belgium

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2008年 / 155卷 / 07期

关键词：

D O I：

10.1149/1.2919115

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Germanium possesses higher electron and hole mobilities than silicon. There is a big leap, however, between these basic material parameters and implementation for high-performance microelectronics. Here we discuss some of the major issues for Ge metal oxide semiconductor field effect transistors (MOSFETs). Substrate options are overviewed. A dislocation reduction anneal >800 degrees C decreases threading dislocation densities for Ge-on-Si wafers 10-fold to 10(7) cm(-2); however, only a 2 times reduction in junction leakage is observed and no benefit is seen in on-state current. Ge wet etch rates are reported in a variety of acidic, basic, oxidizing, and organic solutions, and modifications of the RCA clean suitable for Ge are discussed. Thin, strained epi-Si is examined as a passivation of the Ge/gate dielectric interface, with an optimized thickness found at similar to 6 monolayers. Dopant species are overviewed. P and As halos are compared, with better short channel control observed for As. Area leakage currents are presented for p +/n diodes, with the n-doping level varied over the range relevant for pMOS. Germanide options are discussed, with NiGe showing the most promise. A defect mode for NiGe is reported, along with a fix involving two anneal steps. Finally, the benefit of an end-of-process H-2 anneal for device performance is shown. (C) 2008 The Electrochemical Society.

引用

页码：H552 / H561

页数：10

共 65 条

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