Electric-field penetration into metals: Consequences for high-dielectric-constant capacitors

被引:147
作者
Black, CT [1 ]
Welser, JJ [1 ]
机构
[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Heights, NY 10598 USA
关键词
barium compounds; capacitors; dielectric devices; dielectric materials; high-dielectric-constant materials; memories; MIM devices; semiconductor-metal interfaces;
D O I
10.1109/16.753713
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A consequence of the finite electronic screening length in metals is that electric fields penetrate short distances into the metal surface. Using a simple, semiclassical model of an idealized capacitor, we estimate the capacitance correction due to the distribution of displacement charge in the metal electrodes. We compare our result with experimental data from thin-film high-dielectric-constant capacitors, which are currently leading contenders for use in future high-density memory applications. This intrinsic mechanism contributes to the universally-seen decrease in measured dielectric constant with capacitor film thickness.
引用
收藏
页码:776 / 780
页数:5
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