DETERMINATION OF THE INVERSION-LAYER THICKNESS FROM CAPACITANCE MEASUREMENTS OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH ULTRATHIN OXIDE LAYERS

被引：41

作者：

HARTSTEIN, A

ALBERT, NF

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.38.1235

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1235 / 1240

页数：6

共 11 条

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