IMPURITY BANDS IN INVERSION LAYERS

被引：22

作者：

HARTSTEIN, A

FOWLER, AB

机构：

来源：

SURFACE SCIENCE | 1978年 / 73卷 / 01期

关键词：

D O I：

10.1016/0039-6028(78)90467-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：19 / 30

页数：12

相关论文

共 23 条

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[2] CONDUCTION MECHANISMS IN BANDTAILS AT SI-SIO2 INTERFACE
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[3] DORDA G, 1973, FESTKORPERPROBLEME, V13, P215
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[5] FOWLER AB, 1966, J PHYS SOC JPN, VS 21, P331
[6] SUBSTRATE BIAS EFFECTS ON ELECTRON-MOBILITY IN SILICON INVERSION LAYERS AT LOW-TEMPERATURES
FOWLER, AB
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (01) : 15 - 17
[7] OXIDE-CHARGE-INDUCED IMPURITY LEVEL IN SILICON INVERSION LAYERS
HARTSTEIN, A
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[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (23) : 1435 - 1437
[8] ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS
HARTSTEIN, A
NING, TH
FOWLER, AB
[J]. SURFACE SCIENCE, 1976, 58 (01) : 178 - 181
[9] HIGH-TEMPERATURE VARIABLE RANGE HOPPING CONDUCTIVITY IN SILICON INVERSION LAYERS
HARTSTEIN, A
FOWLER, AB
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (11): : L249 - L253
[10] HARTSTEIN A, 1976, PHYSICS SEMICONDUCTO, P741