Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation

被引：103

作者：

Auret, FD ^{[1
]}

Goodman, SA

Koschnick, FK

Spaeth, JM

Beaumont, B

Gibart, P

机构：

[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa

[2] Univ Gesamthsch Paderborn, Fachbereich Phys, D-4790 Paderborn, Germany

[3] CNRS, CRHEA, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 25期

关键词：

D O I：

10.1063/1.122881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial n-GaN was irradiated with 5.4-MeV He ions. Capacitance-voltage (C-V) measurements showed that 5.4-MeV He ions remove free carriers at a rate of 6200 +/- 300 cm(-1) in the first micron below the surface. Deep level transient spectroscopy (DLTS) revealed that, in addition to the radiation-induced defects previously detected by DLTS at 0.18-0.20 eV below the conduction band, He-ion irradiation introduced two additional prominent defects, ER4 (E-C-0.78 eV) and ER5 (E-C-0.95 eV) at rates of 1510 +/- 300 and 3030 +/- 500 cm(-1), respectively. Capture cross-section measurements revealed that electron capture kinetics of ER5 is similar to that of a line defect. (C) 1998 American Institute of Physics. [S0003-6951(98)04151-5].

引用

页码：3745 / 3747

页数：3

共 19 条

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