On the width of the recombination zone in ambipolar organic field effect transistors

被引：22

作者：

Kemerink, M. ^{[1
]}

Charrier, D. S. H. ^{[1
]}

Smits, E. C. P. ^{[2
,3
]}

Mathijssen, S. G. J. ^{[1
,2
]}

de Leeuw, D. M. ^{[2
,3
]}

Janssen, R. A. J. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[3] Univ Groningen, Zernike Inst Adv Mat, NL-9700 AB Groningen, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期

关键词：

D O I：

10.1063/1.2963488

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The performance of organic light emitting field effect transistors is strongly influenced by the width of the recombination zone. We present an analytical model for the recombination profile. By assuming Langevin recombination, the recombination zone width W is found to be given by W = root 4.34d delta, with d and delta the gate dielectric and accumulation layer thicknesses, respectively. The model compares favorably to both numerical calculations and measured surface potential profiles of an actual ambipolar device. (C) 2008 American Institute of Physics.

引用

页数：3

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