Analytic device model for light-emitting ambipolar organic semiconductor field-effect transistors

Recent experiments have demonstrated ambipolar channel conduction and light emission in conjugated polymer field-effect transistors (FETs). Electrons and holes are injected from metal source and drain contacts with different work functions, propagate through the FET channel, and recombine emitting light. The position of maximum light emission is varied by changing the voltages applied to the transistor terminals. Here, we present an analytic device model for ambipolar organic field-effect transistors, based on the gradual channel approximation. Trapping of the injected carriers is found to be important. The model results are in good agreement with the experimental observations. (c) 2006 American Institute of Physics.