Logic circuits using solution-processed single-walled carbon nanotube transistors

被引：17

作者：

Nouchi, Ryo ^{[1
]}

Tomita, Haruo ^{[1
]}

Ogura, Akio ^{[1
]}

Kataura, Hiromichi ^{[2
]}

Shiraishi, Masashi ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Div Mat Phys, Toyonaka, Osaka 5608531, Japan

[2] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba 3058562, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 25期

关键词：

D O I：

10.1063/1.2949686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports on the realization of logic circuits employing solution-processed networks of single-walled carbon nanotubes. We constructed basic logic gates (inverter and NAND) with n- and p-type field-effect transistors fabricated by solution-based chemical doping. Complementary metal-oxide-semiconductor inverters exhibited voltage gains of up to 20, which illustrates the great potential of carbon nanotube networks for printable flexible electronics. (c) 2008 American Institute of Physics.

引用

页数：3

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