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Configuration of dislocations in lateral overgrowth GaN films

被引：30
作者：
Hao, M
Mahanty, S
Sugahara, T
Morishima, Y
Takenaka, H
Wang, J
Tottori, S
Nishino, K
Naoi, Y
Sakai, S
机构：
[1] Univ Tokushima, Satellite Venture Business Lab, Tokushima 7708506, Japan
[2] Univ Tokushima, Dept Elect & Elect Engn, Tokushima 7708506, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 09期
关键词：
D O I：
10.1063/1.370110
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The dislocation distribution and emission profile of sublimation lateral overgrowth GaN and metalorganic chemical vapor deposition films have been studied using transmission electron microscopy and cathodoluminescence. A close relationship between the emission profile and the dislocation distribution has been observed. The results show that the dislocations not only affect the band edge emission, but also the yellow emission. It is observed that the dislocations propagate laterally in the overgrowth region. The mechanism of the change in the propagation direction of dislocations has been discussed. (C) 1999 American Institute of Physics. [S0021-8979(99)06309-4].
引用
收藏
页码：6497 / 6501
页数：5
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