Study of threading dislocations in wurtzite GaN films grown on sapphire by metalorganic chemical vapor deposition

被引：27

作者：

Hao, MS ^{[1
]}

Sugahara, T ^{[1
]}

Sato, H ^{[1
]}

Morishima, Y ^{[1
]}

机构：

[1] Univ Tokushima, Dept Elect & Elect Engn, Tokushima 770, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 3A期

关键词：

TEM; GaN/Al2O3; films; threading dislocations; stacking disorder; partial dislocations;

D O I：

10.1143/JJAP.37.L291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The threading dislocations in GaN films grown on Al2O3 substrates were studied by plan view transmission electron microscopy (TEM). A pure edge dislocation and a mixed dislocation with different kinds of screw components, could be distinguished by taking the images near and far-away from the (0001) zone. The experimental results show that some pure edge dislocations form low-angle boundaries and other pure edge dislocations as well as mixed dislocations ara randomly distributed in GaN films. The randomly distributed dislocations result from reactions of partial dislocations. Partial dislocations, on the other hand, is formed to eliminate the stacking disorder near the interface of GaN/Al2O3 films.

引用

页码：L291 / L293

页数：3

共 11 条

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